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Aktive Komponenten

SiC Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Nennspannung[Vdc] Nennstrom [A] Nennstrom [mA] Abmessungen L [mm] Abmessungen W/D [mm] Produkt Feature Produkt Status
SemiQ GP3D006A065X-SBT GP3D006A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 6 0,006 1,37 1,37
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D008A065X-SBT GP3D008A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 8 0,008 1,54 1,54
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D010A065X-SBT GP3D010A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 10 0,01 1,78 1,78
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D012A065X-SBT GP3D012A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 12 0,012 1,5 2,9
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D020A065X-SBT GP3D020A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 20 0,02 2,39 2,39
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D030A065X-SBT GP3D030A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 30 0,03 2,86 2,86
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D050A065X-SBT GP3D050A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 50 0,05 3,5 3,5
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D010A120X-SBT GP3D010A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 10 0,01 2,4 2,4
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D015A120X-SBT GP3D015A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 15 0,015 2,12 4,1
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D020A120X-SBT GP3D020A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 20 0,02 3,25 3,25
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D030A120X-SBT GP3D030A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 30 0,03 3,9 3,9
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D050A120X-SBT GP3D050A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 50 0,05 4,93 4,93
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D005A170X-SBT GP3D005A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 5 0,005 2,4 2,4
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D010A170X-SBT GP3D010A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 10 0,01 2,91 2,91
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D020A170X-SBT GP3D020A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 20 0,02 3,95 3,95
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D006A065A GP3D006A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 6 0,006
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V
 in production
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No Image GP3D006A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 6 0,006
in production
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SemiQ GP3D008A065A GP3D008A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D008A065D GP3D008A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065A GP3D010A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065B GP3D010A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065D GP3D010A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D012A065A GP3D012A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D012A065B GP3D012A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ
 in production
Anfragen
SemiQ GP3D020A065A GP3D020A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D020A065B GP3D020A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D030A065B GP3D030A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ
 in production
Anfragen
SemiQ GP3D050A065B GP3D050A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D020A065U GP3D020A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D024A065U GP3D024A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 24 0,024
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg
 in production
Anfragen
SemiQ GP3D040A065U GP3D040A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A120A GP3D010A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D010A120B GP3D010A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120A GP3D015A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120B GP3D015A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120A GP3D020A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120B GP3D020A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120B GP3D030A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V
 in production
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No Image GP3D040A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 40 0,04
in production
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SemiQ GP3D050A120B GP3D050A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120U GP3D020A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120U GP3D030A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D040A120U GP3D040A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D060A120U GP3D060A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 60 0,06
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D005A170B GP3D005A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 5 0,005
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ
 in production
Anfragen
SemiQ GP3D010A170B GP3D010A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current
 in production
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No Image GP3D020A170A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1700 20 0,02
in production
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SemiQ GP3D020A170B GP3D020A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V
 in production
Anfragen
SemiQ GP3D016A065U GP3D016A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 16 0,016
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V
 in production
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No Image GP3D006A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 6 0,006
in production
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No Image GP3D008A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 8 0,008
in production
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SemiQ GHXS010A060S-D3 GHXS010A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 10 0,01
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
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SemiQ GHXS020A060S-D3 GHXS020A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 20 0,02
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS030A060S-D3 GHXS030A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V
in production
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SemiQ GHXS030A060S-D1E GHXS030A060S-D1E SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 600 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS050A060S-D3 GHXS050A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS050B065S-D3 GHXS050B065S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 650 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS100B065S-D3 GHXS100B065S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 650 100 0,1
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
Anfragen
SemiQ GHXS015A120S-D1 GHXS015A120S-D1 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 1200 15 0,015
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS015A120S-D3 GHXS015A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 15 0,015
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS030A120S-D3 GHXS030A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS030A120S-D1E GHXS030A120S-D1E SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 1200 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS045A120S-D3 GHXS045A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 45 0,045
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS050B120S-D3 GHXS050B120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS060A120S-D3 GHXS060A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 60 0,06
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation
in production
Anfragen
SemiQ GHXS100B120S-D3 GHXS100B120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 100 0,1
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS300A120S7D5 GHXS300A120S7D5 SemiQ SiC Module SiC Dioden Aktive Komponenten S7 Half Bridge 1200 300 0,3
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
Anfragen
SemiQ GHXS400A120S7D5 GHXS400A120S7D5 SemiQ SiC Module SiC Dioden Aktive Komponenten S7 Half Bridge 1200 400 0,4
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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Si Thyristoren

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem Y24KPA Y24KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 600 0,6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y30KPA Y30KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y38KPA Y38KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 1500 1,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y24KPC Y24KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 500 0,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y30KPC Y30KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y38KPC Y38KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 1500 1,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y50KPC Y50KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 2500 2,5
In Production
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Techsem Y65KPC Y65KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 3000 3
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y76KPC Y76KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y24KPE Y24KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y30KPE Y30KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 600 0,6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y38KPE Y38KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y50KPE Y50KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1800 1,8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y65KPE Y65KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2800 2,8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y76KPE Y76KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem H38KPR H38KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 400 0,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem H50KPR H50KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 900 0,9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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No Image H65KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 1600 1,6
In Production
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Techsem H89KPR H89KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 2200 2,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem H100KPR H100KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 3500 3,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem H125KPR H125KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 5200 5,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y50KPJ Y50KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 1200 1,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y65KPJ Y65KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 1900 1,9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y76KPJ Y76KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 2400 2,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
 In Production
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Techsem Y30KKE Y30KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y38KKE Y38KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 800 0,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y50KKE Y50KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1300 1,3
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y65KKE Y65KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2000 2
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y76KKE Y76KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2700 2,7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y70KKG Y70KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 2100 2,1
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y76KKG Y76KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 2700 2,7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y89KKG Y89KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 3800 3,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem Y100KKG Y100KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 4800 4,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
 In Production
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Techsem MTC26 MTC26 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC40 MTC40 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC55 MTC55 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC70 MTC70 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC90 MTC90 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC110 MTC110 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC135 MTC135 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC160 MTC160 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC182 MTC182 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC200 MTC200 Techsem Module Si Thyristoren Aktive Komponenten 2000 to 2500 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC250 MTC250 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC285 MTC285 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 285 0,285
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC500 MTC500 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem MTC570 MTC570 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem Mt500 Mt500 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Techsem Mt400 Mt400 Techsem Module Si Thyristoren Aktive Komponenten 2000 to 2500 400 0,4
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
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Si Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem Y24ZPA Y24ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1000 1
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y30ZPA Y30ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1460 1,46
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y38ZPA Y38ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1990 1,99
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y50ZPA Y50ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 6300 6,3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y65ZPA Y65ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 8500 8,5
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y24ZPC Y24ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 600 0,6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y30ZPC Y30ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 1310 1,31
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y38ZPC Y38ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 1680 1,68
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y50ZPC Y50ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 3000 3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem Y76ZPC Y76ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 6000 6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
 In Production
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Techsem MDC26 MDC26 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC40 MDC40 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC55 MDC55 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC70 MDC70 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC90 MDC90 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC110 MDC110 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC135 MDC135 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC160 MDC160 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC182 MDC182 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC200 MDC200 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC250 MDC250 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC300 MDC300 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 300 0,3
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC500 MDC500 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDC570 MDC570 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MD500 MD500 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 400 0,4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
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Gleichrichter

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem MDS50 MDS50 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 50 0,05
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS75 MDS75 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 75 0,075
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS100 MDS100 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 100 0,1
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS150 MDS150 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 150 0,15
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
Techsem MDS200 MDS200 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 200 0,2
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
 In Production
Anfragen
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